(3) Tamb = −55 ☌.īase-emitter voltage as a function of collector current typical values.Ĭollector-emitter saturation voltage as a function of collector current typical values.Įquivalent on-resistance as a function of collector current typical values. (3) Tamb = −55 ☌.ĭiode capacitance as a function of reverse voltage typical values.ĭC current gain as a function of collector current typical values. Schottky barrier diode f = 1 MHz Tamb = 25 ☌. Reverse current as a function of reverse voltage typical values.

(3) Tamb = 25 ☌.įorward current as a function of forward voltage typical values. SYMBOLĬollector-emitter saturation voltage IC = −100 mA IB = −1 mA IC = −1 A IB = −100 mA Device mounted on a FR4 printed-circuit board, single-sided copper tinplated standard footprint for SOT457.ĮLECTRICAL CHARACTERISTICS Tamb = 25 ☌ unless otherwise specified. Device mounted on a FR4 printed-circuit board single-sided copper tinplated mounting pad for collector and cathode both 1 cm2. Device mounted on a ceramic printed-circuit board single-sided copper tinplated standard footprint. Solder point of collector or cathode tab. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Thermal resistance from junction to ambient Thermal resistance from junction to solder point Mounted on a ceramic printed-circuit board single-sided copper tinplated standard footprint. Device mounted on a FR4 printed-circuit board single-sided copper tinplated mounting pads for collector and cathode both 1 cm2. Device mounted on a FR4 printed-circuit board single-sided copper tinplated standard footprint for SOT457. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020PDĭESCRIPTION plastic surface mounted package 6 leads Diode ĭESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package.

Low collector-emitter saturation voltage.

ACT-E128K32C-140F2C.PMEM4020PD PNP transistor/Schottky-diode module Product specification.

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